W. Kaiser, K. Mathwig, S. Deubert, J. P. Reithmaier, A. Forchel, O. Parillaud, M. Krakowski, D. Hadass, V. Mikhelashvili and G. Eisenstein
Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structures
Electronic Letters 41 (2005) 808.
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Laterally coupled, complex distributed feedback lasers based on AlInGaAs/InAs/InP quantum dash layers were fabricated by maskless focused ion beam lithography. Continuous-wave powers above 30 mW at room temperature, sidemode suppression ratios of 44 dB and a modulation bandwidth of 7.6 GHz were demonstrated.