W. Kaiser, K. Mathwig, S. Deubert, A. Somers, A. Forchel, J.P. Reithmaier, O. Parillaud, M. Krakowski, D. Hadass, V. Mikhelashvili, G. Eisenstein and M. Legge
Laterally Coupled DFB Lasers Based on InAs/lnP-QDash Structures for
Broadband Applications
31st European Conference on Optical Communications (ECOC) 3 (2005) 559.
[pdf]

Laterally coupled DFB lasers based on quantum dashes were fabricated by FIB lithography. CW­ powers above 30 mW, high SMSRs, a modulation bandwidth of 7.6 GHz and singlemode emission from 1.5 to 1.9 µm were demonstrated.

W. Kaiser, K. Mathwig, S. Deubert, J. P. Reithmaier, A. Forchel, O. Parillaud, M. Krakowski, D. Hadass, V. Mikhelashvili and G. Eisenstein
Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structures
Electronic Letters 41 (2005) 808.
[pdf]

Laterally coupled, complex distributed feedback lasers based on AlInGaAs/InAs/InP quantum dash layers were fabricated by maskless focused ion beam lithography. Continuous-wave powers above 30 mW at room temperature, sidemode suppression ratios of 44 dB and a modulation bandwidth of 7.6 GHz were demonstrated.